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| MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK10KM-12 OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ................................................................................ 600V rDS (ON) (MAX) .............................................................. 1.18 ID ......................................................................................... 10A Viso ................................................................................ 2000V Integrated Fast Recovery Diode (MAX.) ........150ns q e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 30 10 30 10 30 40 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 30 -- -- 2 -- -- 4.5 -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.90 4.50 7.0 1500 170 25 25 35 130 45 1.5 -- -- Max. -- -- 10 1 4 1.18 5.90 -- -- -- -- -- -- -- -- 2.0 3.13 150 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 5 3 2 tw=10s 100s 1ms 10ms POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) 0 50 100 150 200 CASE TEMPERATURE TC (C) 30 101 7 5 3 2 100 7 5 3 2 20 10 0 TC = 25C Single Pulse 10-1 7 DC 50 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 6V 40W DRAIN CURRENT ID (A) TC = 25C Pulse Test 12 5V 8 OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 6V 40W 5V 20 10 DRAIN CURRENT ID (A) 16 8 TC = 25C Pulse Test 6 4 4 4V 0 0 10 20 30 40 50 2 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test 32 ID = 20A 2.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test 1.6 VGS = 10V 20V 24 1.2 16 10A 8 5A 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS=50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25C DRAIN CURRENT ID (A) 32 24 75C 100 7 5 3 2 10-1 -1 10 23 5 7 100 23 5 7 101 125C 16 8 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) Ciss 103 7 5 3 2 102 7 5 Coss 3 2 102 7 5 3 2 101 10-1 23 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf td(on) tr 5 7 100 23 5 7 101 3 Tch = 25C Crss 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 20 Tch = 25C ID = 10A 16 VDS = 100V 200V 12 400V 8 VGS = 0V Pulse Test 32 TC = 125C 24 16 25C 75C 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 VGS = 10V ID = 1/2ID Pulse Test 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 102 7 5 3 2 101 0 10 23 5 7 101 trr 3 2 101 7 5 Irr Tch = 25C Tch = 150C 23 3 2 0.8 0.6 0.4 -50 0 50 100 150 100 5 7 102 CHANNEL TEMPERATURE Tch (C) SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 10A VGS = 0V 3 3 VDD = 250V 2 trr 2 102 7 5 3 2 Irr 101 7 5 101 0 Tch = 25C 10 Tch = 150C 7 5 23 5 7 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 101 7 5 3 2 10-1 23 5 7 102 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) SOURCE CURRENT dis/dt (-A/s) Feb.1999 REVERSE RECOVERY CURRENT Irr (A) DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A /s 7 7 VGS = 0V 5 5 VDD = 250V |
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